| PART |
Description |
Maker |
| 27C512-120 M27C512-12B M27C512-12B1TR M27C512-12B1 |
512 Kbit (64Kb x8) UV EPROM and OTP EPROM
512 Kbit 64Kb x8 UV EPROM and OTP EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27W512-100K6 M27W512-100K6TR |
512 Kbit (64 Kbit x8) low-voltage OTP EPROM
|
STMicroelectronics
|
| M27C512-45XF6 M27C512 M27C512-10B1 M27C512-10B3 M2 |
512 Kbit (64K x8) UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| M24512-WMW6TP M24256-BR M24256-BRDW6G M24256-BRDW6 |
512 Kbit and 256 Kbit Serial I2C bus EEPROM with three Chip Enable lines
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27C1001-35FTR M27C1001-45FTR M27C100106 M27C1001- |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM
4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
http://
|
| MC68HC711E20VFS2 MC68HC711E9VFS2 MC68HC711E9VFN2 M |
Microcontroller, 2 MHz, RAM=768, ROM=0, EPROM=20K, EEPROM=512
Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
Microcontroller, 3 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
|
Motorola
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
